GaMnAs is a kind of new Semimagnetic Semiconductor material prepared by Low-temperature molecular beam epitaxy, which combines the functionality of semiconductors with that of ferromagnetic materials. 利用低温分子束外延技术(LT-MBE)制备的GaMnAs是一种新型的半磁半导体材料(DMS),它兼有磁性材料和半导体化合物的特点。
ECR-PEMOCVD was utilized specially for low-temperature growth of epitaxy films of InN GaN, and AlN. ECR-PEMOCVD适合低温外延生长氮化铟,氮化镓,氮化铝等薄膜。